| PART |
Description |
Maker |
| PBLS6021D |
60 V, 1.5 A PNP BISS loadswitch 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| SDH03 |
PNP NPN Darlington H-bridge
PNP NPN Darlington Transistors (H-bridge)(PNP NPN达林顿晶体管(H桥）) 1.5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
|
| BC858AW-7-F BC858BW-7-F BC857CW-7-F BC858CW-7-F BC |
TRANS PNP BIPOLAR 45V SOT-323 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
Diodes Inc.
Diodes, Inc.
Diodes Incorporated
|
| BC557 BC556B BC556A BC557B BC556 BC557C BC558 |
PNP Silicon Planar Epitaxial Transistors
100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 TO-92, 3 PIN
100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Rectron Semiconductor
RECTRON LTD
|
| KRA568U |
100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR USV, 5 PIN
|
Bourns, Inc.
|
| DDA122LU-7-F DDA122TU-7-F DDA142TU-7-F DDA142JU-7- |
PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR 100 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Inc.
Diodes, Inc.
|
| NSBA114EDXV6/D NSBA114EDXV6T1 |
Dual Bias Resistor Transistors(双偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| ZTX653DCSM ZTX753DCSM ZTX653DCSM02 ZTX653/753DCSMG |
2000 mA, 100 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR HERMETIC SEALED, CERAMIC, LCC2-6
NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS
|
TT electronics Semelab, Ltd.
Seme LAB
http://
|
| DCX4710H-7 |
100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Inc.
Diodes, Inc.
|
| MIMD10A2 MIMD10A-7-F |
DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes, Inc.
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| 2SB324 2SB709 2SB709A |
GE PNP ALLOY JUNCTION(UL TYPE) 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
|
